Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction p-n Diode
Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction p-n Diode
复制标题
DOI：
10.1021/nn5027388
复制
发表时间：
2014-08-01
期刊：
影响因子：
17.1
通讯作者：
Ye, Peide D.
中科院分区：
文献类型：
--
作者：
Deng, Yexin;Luo, Zhe;Ye, Peide D.
磷烯是一种二维元素材料，它是一种单层的黑磷，最近已经被机械剥离。在体积形态下，黑磷表现出较高的载流子迁移率（类似于10000 cm(2)/V）。s)和类似于0.3 eV的直接带隙。性能良好的p型场效应晶体管，迁移率高达1000 cm(2)/V。S以及光电晶体管已经在少层黑磷上得到了证明，由于其高空穴迁移率和厚度依赖的直接带隙，显示了其在电子学和光电子学应用中的前景。然而，作为现代电子和光电子器件的基本组成部分，p-n结尚未在黑磷的基础上实现。在本文中，我们展示了基于p型黑磷/n型单层MoS2范德华p-n异质结的门可调谐p-n二极管。经光照后，这些超薄p-n二极管在633 nm波长处的最大光电探测响应度为418 mA/W，光伏能量转换的外量子效率为0.3%。这些p-n二极管有望用于宽带光电探测和太阳能收集。
Phosphorene, a elemental 2D material, which is the monolayer of black phosphorus, has been mechanically exfoliated recently. In its bulk form, black phosphorus shows high carrier mobility (similar to 10000 cm(2)/V.s) and a similar to 0.3 eV direct band gap. Well-behaved p-type field-effect transistors with mobilities of up to 1000 cm(2)/V.s, as well as phototransistors, have been demonstrated on few-layer black phosphorus, showing its promise for electronics and optoelectronics applications due to its high hole mobility and thickness dependent direct band gap. However, p-n junctions, the basic building blocks of modem electronic and optoelectronic devices, have not yet been realized based on black phosphorus. In this paper, we demonstrate a gate-tunable p-n diode based on a p-type black phosphorus/n-type monolayer MoS2 van der Waals p-n heterojunction. Upon illumination, these ultrathin p-n diodes show a maximum photodetection responsivity of 418 mA/W at the wavelength of 633 nm and photovoltaic energy conversion with an external quantum efficiency of 0.3%. These p-n diodes show promise for broad-band photodetection and solar energy harvesting.