Ambipolar transistors based on random networks of WS2 nanotubes
Ambipolar transistors based on random networks of WS2 nanotubes
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DOI：
10.7567/apex.9.075001
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发表时间：
2016-06
影响因子：
2.3
通讯作者：
Mitsunari Sugahara;H. Kawai;Yohei Yomogida;Y. Maniwa;S. Okada;K. Yanagi
中科院分区：
文献类型：
--
作者：
Mitsunari Sugahara;H. Kawai;Yohei Yomogida;Y. Maniwa;S. Okada;K. Yanagi
WS 2纳米管是由层状材料二硫化钨制成的轧制多壁纳米管。它们的原纤维结构使得能够制造随机网络膜;然而，这些膜是不导电的，因此还没有用于电子应用。在这里，我们证明了使用电解质门控方法将载流子注入WS 2网络可能会导致这些网络充当半导体通道。我们阐明了WS 2纳米管在电解质选通下的拉曼特征，证实了电子和空穴注入的可行性。我们揭示了双极行为的WS 2纳米管网络的场效应晶体管设置与电解质门控。
WS2 nanotubes are rolled multiwalled nanotubes made of a layered material, tungsten disulfide. Their fibril structures enable the fabrication of random network films; however, these films are nonconducting, and thus have not been used for electronic applications. Here, we demonstrate that carrier injection into WS2 networks using an electrolyte gating approach could cause these networks to act as semiconducting channels. We clarify the Raman characteristics of WS2 nanotubes under electrolyte gating and confirm the feasibility of the injection of electrons and holes. We reveal ambipolar behaviors of the WS2 nanotube networks in field-effect transistor setups with electrolyte gating.