Second-harmonic optical response from first principles
Second-harmonic optical response from first principles
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DOI：
10.1238/physica.topical.109a00128
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发表时间：
2004-01-01
期刊：
影响因子：
2.9
通讯作者：
Ambrosch-Draxl, C.
中科院分区：
文献类型：
--
作者：
Sharma, S.;Ambrosch-Draxl, C.
我们给出了计算半导体和绝缘体的线性和二阶光学响应的完整形式。利用微扰理论推导了光磁化率的表达式。作为起点，简要介绍了单粒子和多粒子哈密顿量和算子的背景。作为一个例子，我们报告了单层InP/GaP（110）超晶格的线性和非线性光学性质的计算。线性光谱中的特征被识别为来自不同波段的组合。从线性光谱峰的共振角度分析了二阶光谱的主要特征。利用应变修正的有效介质模型，突出了二阶光学性质的界面选择性。
We present a full formalism for the calculation of the linear and second- order optical response for semiconductors and insulators. The expressions for the optical susceptibilities are derived within perturbation theory. As a starting point a brief background of the single and many particle Hamiltonians and operators is provided. As an example we report calculations of the linear and nonlinear optical properties of the mono-layer InP/GaP (110) superlattice. The features in the linear optical spectra are identified to be coming from various band combinations. The main features in the second-order optical spectra are analyzed in terms of resonances of peaks in linear optical spectra. With the help of the strain corrected effective-medium-model the interface selectivity of the second-order optical properties is highlighted.