Synthesis of high-purity boron nitride single crystals under high pressure by using Ba-BN solvent
Synthesis of high-purity boron nitride single crystals under high pressure by using Ba-BN solvent
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DOI：
10.1016/j.jcrysgro.2006.12.061
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发表时间：
2007-05-15
影响因子：
1.8
通讯作者：
Watanabe, K.
中科院分区：
文献类型：
--
作者：
Taniguchi, T.;Watanabe, K.
以氮化硼钡为溶剂，在4.5GPa和1500 ℃下合成了高纯立方氮化硼（cBN）和六方氮化硼（hBN）单晶。二次离子质谱法用于分析晶体中的杂质。获得了氧和碳浓度小于10（18）atoms/cm（3）的细cBN和hBN晶体，并通过阴极发光光谱测量了它们的带边光学性质。高纯度的hBN单晶显示出强烈的紫外线发射，证明了它们作为深紫外光发射体的前景。(C)2007 Elsevier B. V.保留所有权利。
High-purity cubic boron nitride (cBN) and hexagonal boron nitride (hBN) single crystals were synthesised at 4.5 GPa and 1500 degrees C using barium boron nitride as a solvent. Secondary ion mass spectrometry was used to analyse impurities in the crystals. Fine cBN and hBN crystals, whose oxygen and carbon concentrations were less than 10(18) atoms/cm(3), were obtained, and their band-edge optical properties were measured by cathodoluminescence spectroscopy. High-purity hBN single crystals exhibited intense ultraviolet emission, demonstrating their promise for use as deep ultraviolet-light emitters. (C) 2007 Elsevier B.V. All rights reserved.