Structural and Optical Characterizations of ZnO Films Grown by Reactive Electron Beam Evaporation
Structural and Optical Characterizations of ZnO Films Grown by Reactive Electron Beam Evaporation
复制标题
DOI：
10.1088/0256-307x/17/9/025
复制
发表时间：
2000-09
影响因子：
3.5
通讯作者：
Wu Hui-zheng;Xu Xiao-ling;Qiu Dong-jiang;He Ke-Ming;Shou Xiang
中科院分区：
文献类型：
--
作者：
Wu Hui-zheng;Xu Xiao-ling;Qiu Dong-jiang;He Ke-Ming;Shou Xiang
通过反应电子束蒸发在 Si(001) 衬底上实现了 ZnO 薄膜的低温外延生长。生长温度为125℃至420℃，最佳温度为200℃至300℃。X射线衍射表明ZnO薄膜具有高度c轴取向，并且(002)衍射峰的线宽明显小于磁控溅射沉积的ZnO薄膜的线宽。光致发光和光致发光激发 (PLE) 光谱测量相结合，证明了 ZnO 薄膜中尖锐的带吸收边缘和激子吸收。 PLE还表明，尽管X射线衍射分析表明在不同氧压下生长的ZnO薄膜的晶体结构保持不变，但随着ZnO薄膜中氧含量的增加，带边附近的吸收特性显着改善。
Low temperature epitaxial growth of ZnO films is achieved on Si(001) substrates by reactive electron beam evaporation. Growth temperature is varied from 125° C to 420° C and the optimum temperature is found between 200° C and 300° C. X-ray diffraction shows that the ZnO films are highly c-axis oriented and the line width of (002) diffraction peak is significantly smaller than that measured from the ZnO films deposited by magnetron sputtering. The combined photoluminescence and photoluminescence excitation (PLE) spectroscopic measurements demonstrate the sharp band-absorption edge and exciton absorption in the ZnO films. PLE has also revealed that the absorption characteristic near the band edge is remarkably improved with the increase of oxygen content in the ZnO films, although x-ray diffraction analysis shows that the crystalline structure of ZnO films grown under different oxygen pressures remains unchanged.