Unusual growth of polycrystalline oxide film induced by negative ion bombardment in the capacitively coupled plasma deposition
Unusual growth of polycrystalline oxide film induced by negative ion bombardment in the capacitively coupled plasma deposition
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DOI：
10.1063/1.4769224
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发表时间：
2012-12
影响因子：
4
通讯作者：
S. Takayanagi;T. Yanagitani;M. Matsukawa
中科院分区：
文献类型：
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作者：
S. Takayanagi;T. Yanagitani;M. Matsukawa
多晶膜通常在其平行于衬底平面的最密集的平面中生长。我们证明，不使用单独的离子源，通过使用磁控管电容耦合等离子体沉积中产生的高能负离子，可以发生不寻常的晶体生长。定量测量了负离子进入衬底的能量和通量，并与ZnO薄膜中不寻常的（112 <$0）取向的择优晶体生长进行了比较。在0.1 Pa的低气压下，阴极侵蚀区存在较强的（112 ⁄ 0）取向，观察到大量170-250 eV的高能负离子。
A polycrystalline film usually grows in its most densely packed plane parallel to the substrate plane. We demonstrated that the unusual crystalline growth can occur by using energetic negative ions generated in the magnetron capacitively coupled plasma deposition without using separated ion source. Negative ion energy and flux entering the substrate were quantitatively measured and compared with the preferential crystalline growth of unusual (112¯0) orientation in ZnO films. Strong (112¯0) orientation was found at the cathode erosion area where large amount of high energy negative ion of 170–250 eV was observed in low gas pressure of 0.1 Pa.