High Quantum Efficiency Ultrananocrystalline Diamond Photocathode: Negative Electron Affinity Meets $n$-doping
High Quantum Efficiency Ultrananocrystalline Diamond Photocathode: Negative Electron Affinity Meets $n$-doping
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高量子效率超纳米晶金刚石光电阴极：负电子亲和势满足 $n$ 掺杂
DOI：
10.1063/1.4896418
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
S. Baryshev
中科院分区：
文献类型：
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作者：
K. J. P. Quintero;S. Antipov;A. Sumant;C. Jing;A. Kanareykin;S. Baryshev
我们报告了在 150 nm 厚的掺氮超纳米晶金刚石（氢封端）上进行的量子效率 (QE) 测量结果；缩写为 (N)UNCD:H。 (N)UNCD:H 在 254 nm 处表现出 $\sim$10$^{-3}$ ($\sim$0.1%) 的 QE。此外，(N)UNCD:H 对可见光敏感，405 nm 处的 QE 为 $\sim$5$\times$10$^{-8}$，436 nm 处的 QE 为 $\sim$5$\times$10$^{-9}$。生长后和 QE 测量之前，样品暴露在空气中约 2 小时以进行转移和加载。这种设计利用了一个关键组合：1) H-终止在 (N)UNCD 上诱导负电子亲和力 (NEA)，并稳定其表面免受空气暴露； 2) N 掺入在本质绝缘的 UNCD 中诱导 $n$ 型导电性。
We report results of quantum efficiency (QE) measurements carried out on a 150 nm thick nitrogen-incorporated ultrananocrystalline diamond terminated with hydrogen; abbreviated as (N)UNCD:H. (N)UNCD:H demonstrated a QE of $\sim$10$^{-3}$ ($\sim$0.1%) at 254 nm. Moreover, (N)UNCD:H was sensitive in visible light with a QE of $\sim$5$\times$10$^{-8}$ at 405 nm and $\sim$5$\times$10$^{-9}$ at 436 nm. After growth and prior to QE measurements, samples were exposed to air for about 2 hours for transfer and loading. Such design takes advantage of a key combination: 1) H-termination inducing negative electron affinity (NEA) on the (N)UNCD and stabilizies its surface against air exposure; and 2) N-incorporation inducing $n$-type conductivity in intrinsically insulating UNCD.