A compact analytical model for asymmetric single-electron tunneling transistors
A compact analytical model for asymmetric single-electron tunneling transistors
复制标题
非对称单电子隧道晶体管的紧凑分析模型
DOI：
10.1109/ted.2002.808554
复制
发表时间：
2003
影响因子：
3.1
通讯作者：
Y. Takahashi
中科院分区：
文献类型：
--
作者：
H. Inokawa;Y. Takahashi
建立了源漏结电阻和电容参数不相等的非对称单电子隧道晶体管（SETTs）的解析模型。该模型基于稳态主方程，只考虑了两种最可能的充电状态，因此非常简单。即便如此，它仍能准确再现非对称SETT的特殊行为，如漏极电流-栅极电压特性的偏斜和漏极电流-漏极电压特性的库仑阶梯。根据相同的格式导出了SETT的库仑岛电荷和电容分量的解析表达式，并证明了该模型能准确地描述SETT的各个方面的行为。
Analytical model for asymmetric single-electron tunneling transistors (SETTs), in which resistance and capacitance parameters of source/drain junctions are not equal, has been developed. The model is based on the steady-state master equation, takes only the two most-probable charging states into account, and is therefore very simple. Even so, it can accurately reproduce the peculiar behaviors of an asymmetric SETT, such as the skew in the drain current-gate voltage characteristics and the Coulomb staircase in the drain current-drain voltage characteristic. Analytical expressions for the charge in the Coulomb island and the capacitance components of the SETT are also derived according to the same scheme, and it is demonstrated that the model can precisely describe the various aspects of the SETT behavior.