Direct atomistic observation of a contact process between crystalline silicon surfaces at room temperature
Direct atomistic observation of a contact process between crystalline silicon surfaces at room temperature
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室温下晶体硅表面接触过程的直接原子观察
DOI：
10.1103/physrevb.63.033309
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发表时间：
2001
影响因子：
3.7
通讯作者：
T. Kizuka
中科院分区：
文献类型：
--
作者：
T. Kizuka
在室温下，在高分辨率电子显微镜内利用压电驱动实现了纳米级的针尖操作，在没有任何氧化层或辅助材料的情况下接触了晶体硅表面。在空间分辨率为0.2 nm，时间分辨率为{1}{60}$S的条件下，原位观察到了接触过程中原子构型的变化，发现台阶表面和针尖之间的室温接触形成的原子-原子键是旋转的。结果，在接触晶界处引入了缺陷结构，即位错。
Crystalline silicon surfaces without any oxide layer or assisted material were contacted at room temperature by nanometer-sized tip manipulation using piezodriving inside a high-resolution transmission electron microscope. The variation in the atomic configuration during the contact was observed in situ at a spatial resolution of 0.2 nm and a time resolution of $\frac{1}{60}$ s. It was found that the atom-atom bondings formed by the room-temperature contact between the stepped surface and both tips rotated. As a result, a defect structure, i.e., dislocation, was introduced at the contact-grain boundary.