High-Performance Ultrathin-Barrier AlGaN/GaN Hybrid Anode Diode With Al2O3 Gate Dielectric and In Situ Si3N4-Cap Passivation
High-Performance Ultrathin-Barrier AlGaN/GaN Hybrid Anode Diode With Al2O3 Gate Dielectric and In Situ Si3N4-Cap Passivation
复制标题
具有 Al2O3 栅极电介质和原位 Si3N4 帽钝化的高性能超薄势垒 AlGaN/GaN 混合阳极二极管
DOI：
10.1109/ted.2020.3018416
复制
发表时间：
2020-10-01
影响因子：
3.1
通讯作者：
Zhang, Bo
中科院分区：
文献类型：
--
作者：
Zhu, Liyang;Zhou, Qi;Zhang, Bo
在本文中，展示了一种具有金属-绝缘体-半导体（MIS）门控混合阳极（MG-HAD）和原位氮化硅帽钝化的超薄势垒（UTB） AlGaN/ gan二极管。由生长的algan势垒厚度（4.9 nm）决定的本征导通电压（V- on）低至0.31 V， V- on具有良好的均匀性。更重要的是，得益于misgated混合阳极结构，UTB MG-HAD具有良好的热稳定性和反向阻断能力。该器件在高达200℃的高温环境下，在-300 V电压下的漏电流小于1 μ a /mm，比基准器件w/o栅极介质的漏电流低100倍以上。此外，由于在Al2O3栅极介质沉积之前加入了原位Si3N4-cap钝化层和远程等离子体预处理（RPP），该器件的动态特性得到了显著改善。UTB MG-HAD具有精确的V-ON调制和低反向泄漏，是电力电子应用的极大兴趣。
In this article, an ultrathin-barrier (UTB) AlGaN/GaNdiode featuring metal-insulator-semiconductor (MIS)-gated hybrid anode (MG-HAD) and in situ Si3N4 cap passivation is demonstrated. The intrinsic turn-on voltage (V-ON)as low as 0.31 V determined by the as-grown AlGaN-barrier thickness (4.9 nm) is obtained and the V-ON exhibits excellent uniformity. More importantly, benefit from the MIS-gated hybrid anode structure, the UTB MG-HAD features good thermal stability in reverse blocking capability. The device delivers a substantially low leakage less than 1 mu A/mm at -300 V at high temperature (HT) up to 200 degrees C, which is more than 100x lower than that in the reference device w/o gate dielectric. Besides, the device exhibits respectably improved dynamic characteristics due to the incorporation of in situ Si3N4-cap passivation layer and remote plasma pretreatment (RPP) prior to Al2O3 gate dielectric deposition. The UTB MG-HAD featuring precisely V-ON modulation and low reverse leakage is of great interest for power electronic applications.