Robust linear sampling switch for low-voltage SAR ADCs

Robust linear sampling switch for low-voltage SAR ADCs
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适用于低压 SAR ADC 的稳健线性采样开关

DOI:
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发表时间:
2020
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通讯作者:
J. Goes
J. Goes
中科院分区:
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文献类型:
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作者:
B. Tiwari;P. Bahubalindruni;Sujay Deb;J. Goes

文献摘要

被引文献

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提出了一种工作在几十MHz频率下的低压逐次逼近寄存器(SAR)模数转换器的线性采样开关。所提出的开关采用自举传输门,其中体电压在内部产生,以最小化晶体管阈值电压随输入信号幅度的变化。因此,在低电源电压下,无需使用宽晶体管和/或电荷泵,即可在整个输入信号范围内确保几乎恒定且低的导通电阻(导通)。所提出的开关是使用标准的65纳米CMOS工艺设计的。版图后仿真结果表明,在采样频率为100 MHz,电源电压为0.8 V时,信噪比和失真比(SNDR)分别为87.81和87.81,无杂散动态范围(SFDR)和总谐波失真(THD)分别为87.81和90,总谐波失真(THD)为-91.5,HBox为-91.5。此外,在不同工艺拐角和不同温度下,该开关对输入信号幅度的最大变化量为1%,低于文献中报道的其他采样开关。
This paper presents a linear sampling switch for low-voltage successive-approximation register (SAR) analogue-to-digital converters (ADCs) operating at a frequency of tens of MHz. The proposed switch employs a bootstrapped transmission gate, where the bulk voltages are generated internally to minimize variations in the threshold voltage of transistors with input signal amplitude. Thus, ensuring almost constant and low ON-resistance ( $$R_{ON}$$ R ON ) over complete input signal range without using wide transistors, charge pumps, or both, at low supply voltages. The proposed switch was designed using standard 65 nm CMOS technology. The post-layout simulations have shown a signal to noise and distortion ratio (SNDR) of 87.81 dB, a spurious-free dynamic range (SFDR) of 90 dB and a total harmonic distortion (THD) of $$-91.5,hbox {dB}$$ - 91.5 dB at a sampling frequency and supply voltage of 100 MHz and 0.8 V, respectively. In addition, the switch has shown a maximum variation of 1% in $$R_{ON}$$ R ON over input signal amplitude at different process corners and temperature, which is low compared to other sampling switches reported in the literature.