Emergence of nearly flat bands through a kagome lattice embedded in an epitaxial two-dimensional Ge layer with a bitriangular structure
Emergence of nearly flat bands through a kagome lattice embedded in an epitaxial two-dimensional Ge layer with a bitriangular structure
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DOI：
10.1103/physrevb.102.201102
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发表时间：
2020-11
影响因子：
3.7
通讯作者：
A. Fleurence;C. Lee;R. Friedlein;Y. Fukaya;S. Yoshimoto;K. Mukai;H. Yamane;N. Kosugi;J. Yoshinobu;T. Ozaki;Y. Yamada-Takamura
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文献类型：
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作者：
A. Fleurence;C. Lee;R. Friedlein;Y. Fukaya;S. Yoshimoto;K. Mukai;H. Yamane;N. Kosugi;J. Yoshinobu;T. Ozaki;Y. Yamada-Takamura
发现Ge原子在Ge（111）衬底上生长的二硼化锆薄膜上偏聚形成二维双三角结构，最近预测该结构是通过嵌入的kagome晶格形成的平带材料。角分辨光电子发射实验与理论计算一起指出，尽管不可忽略的面内长程跳跃和与衬底的相互作用，存在一个几乎平坦的带。这提供了一个实验验证的事实，即一个平带可以出现从原子之间的电子耦合，而不是从原子结构的几何形状。
Ge atoms segregating on zirconium diboride thin films grown on Ge(111) were found to crystallize into a two-dimensional bitriangular structure, which was recently predicted to be a flat band material through an embedded kagome lattice. Angle-resolved photoelectron emission experiments together with theoretical calculations pointed out the existence of a nearly flat band in spite of non-negligible in-plane long-range hopping and interactions with the substrate. This provides an experimental verification for the fact that a flat band can emerge from the electronic coupling between atoms and not from the geometry of the atomic structure.