GHz photon-activated hopping between localized states in a silicon quantum dot
GHz photon-activated hopping between localized states in a silicon quantum dot
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GHz 光子激活硅量子点局域态之间的跳跃
DOI：
10.1088/1367-2630/16/1/013016
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发表时间：
2014
影响因子：
3.3
通讯作者：
S. Oda and D. A. Williams
中科院分区：
文献类型：
--
作者：
T. Ferrus;A. Rossi;A. Andreev;T. Kodera;T. Kambara;W;Lin;S. Oda and D. A. Williams
我们讨论了千兆赫光子辐照对简并掺磷硅量子点的影响，特别是在4.2K下，栅极引线上电压偏移的产生以及一个或两个电子通过库仑阻塞解除的隧穿。一个半解析模型，解释了实验观察到的主要特点。最终，这两种效应都可以提供一种有效的方式来通过微波脉冲光学控制和操作电隔离结构。在量子计算架构中，这些结果可能导致使用微波复用来操纵多量子位配置中的量子态。
We discuss the effects of gigahertz photon irradiation on a degenerately phosphorus-doped silicon quantum dot, in particular, the creation of voltage offsets on gate leads and the tunneling of one or two electrons via Coulomb blockade lifting at 4.2 K. A semi-analytical model is derived that explains the main features observed experimentally. Ultimately both effects may provide an efficient way to optically control and operate electrically isolated structures by microwave pulses. In quantum computing architectures, these results may lead to the use of microwave multiplexing to manipulate quantum states in a multi-qubit configuration.