Optoelectronic Gas Sensor Based on Few-Layered InSe Nanosheets for NO2 Detection with Ultrahigh Antihumidity Ability
Optoelectronic Gas Sensor Based on Few-Layered InSe Nanosheets for NO2 Detection with Ultrahigh Antihumidity Ability
复制标题
基于多层 InSe 纳米片的光电气体传感器，用于检测具有超高抗湿能力的 NO2
DOI：
10.1021/acs.analchem.0c01941
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发表时间：
2020
影响因子：
7.4
通讯作者：
Li Yingchun
中科院分区：
文献类型：
--
作者：
Zhang Lu;Li Zhongjun;Liu Jiang;Peng Zhengchun;Zhou Jia;Zhang Han;Li Yingchun
Two-dimensional (2D) transition-metal/metal chalcogenides including MoS2, MoSe2, WS2, SnS2, etc. have shown considerable potential for the fabrication of gas sensors for NO2detection. However, these sensors usually suffer from sluggish and incomplete recovery at room temperature, and their sensitivities are limited by presorbed O2. In this work, a novel optoelectronic gas sensor based on direct-bandgap InSe nanosheets was demonstrated. Because of the excellent photoelectric and sensing properties in few-layer InSe, detection of NO2at room temperature was realized. Ultrahigh and reversible responses were obtained under ultraviolet (UV) light illumination, and the limit of detection (0.98 ppb) was ∼40 times lower than that observed without UV light. Furthermore, the effects of O2and H2O molecules on sensor performance were fully studied through experiments and density functional theory. Some new mechanisms of NO2detection in high relative humidity conditions under UV illumination were proposed, including regulation of proton transfer and induction of H2O2reduction. In all, this work not only broadens the application field of 2D InSe, but also demonstrates the potential prospect of detecting ppb-level NO2in complex circumstances such as human breath by using 2D material-based sensors with light activation.
