One-dimensional CuO nanowire: synthesis, electrical, and optoelectronic devices application.
One-dimensional CuO nanowire: synthesis, electrical, and optoelectronic devices application.
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DOI：
10.1186/1556-276x-9-637
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发表时间：
2014
影响因子：
--
通讯作者：
Lu J
中科院分区：
文献类型：
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作者：
Luo LB;Wang XH;Xie C;Li ZJ;Lu R;Yang XB;Lu J
在这项工作中，我们提出了一种表面机械研磨处理（SMAT）辅助的方法来合成一维氧化铜纳米线（CuO NWs）的纳米器件应用。纳米线的直径和长度分别为50 ~ 200 nm和5 ~ 20 μm，择优生长方向为沿着[1 0]方向。有趣的是，基于单个CuO NW的纳米场效应晶体管（nanofield effect transistor，nanoFET）表现出典型的p型导电性，空穴迁移率为0.129 cm 2 V-1 s-1，空穴浓度为1.34 × 1018 cm-3。根据第一性原理计算，这种p型导电行为与CuO纳米线中的氧空位有关。此外，CuO NW器件对可见光照射敏感，峰值灵敏度在600 nm处。器件的响应率、电导增益和探测率分别为2.0 × 102 A W ~（-1）、3.95 × 102和6.38 × 10 ~（11）cm Hz ~（1/2）W ~（-1），优于其它材料构成的器件。进一步的研究表明，组装在柔性聚对苯二甲酸乙二醇酯（PET）衬底上的纳米光探测器可以在不同的弯曲条件下工作，具有良好的再现性。上述结果的总体表明，本发明的CuO纳米线是用于组装高性能光电子器件的潜在构建块。
In this work, we presented a surface mechanical attrition treatment (SMAT)-assisted approach to the synthesis of one-dimensional copper oxide nanowires (CuO NWs) for nanodevices applications. The as-prepared CuO NWs have diameter and the length of 50 ~ 200 nm and 5 ~ 20 μm, respectively, with a preferential growth orientation along [1 0] direction. Interestingly, nanofield-effect transistor (nanoFET) based on individual CuO NW exhibited typical p-type electrical conduction, with a hole mobility of 0.129 cm2V-1 s-1 and hole concentration of 1.34 × 1018 cm-3, respectively. According to first-principle calculations, such a p-type electrical conduction behavior was related to the oxygen vacancies in CuO NWs. What is more, the CuO NW device was sensitive to visible light illumination with peak sensitivity at 600 nm. The responsitivity, conductive gain, and detectivity are estimated to be 2.0 × 102 A W-1, 3.95 × 102 and 6.38 × 1011 cm Hz1/2 W-1, respectively, which are better than the devices composed of other materials. Further study showed that nanophotodetectors assembled on flexible polyethylene terephthalate (PET) substrate can work under different bending conditions with good reproducibility. The totality of the above results suggests that the present CuO NWs are potential building blocks for assembling high-performance optoelectronic devices.