Breaking the phonon bottleneck in semiconductor nanocrystals via multiphonon emission induced by intrinsic nonadiabatic interactions.
Breaking the phonon bottleneck in semiconductor nanocrystals via multiphonon emission induced by intrinsic nonadiabatic interactions.
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DOI：
10.1103/physrevlett.95.196401
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发表时间：
2005-11
影响因子：
8.6
通讯作者：
R. Schaller;J. Pietryga;S. Goupalov;M. Petruska;S. Ivanov;V. Klimov
中科院分区：
文献类型：
--
作者：
R. Schaller;J. Pietryga;S. Goupalov;M. Petruska;S. Ivanov;V. Klimov
我们在具有不同能谱的PbSe和CdSe纳米晶(NCs)中观察到了超快的1P到1S带内弛豫。虽然通常用电子-空穴能量转移来解释CdSe NCS中的超快动力学，但这种机制在PbSe NCS中并不活跃，因为导带和价带中的稀疏态密度。我们在PbSe NCS中观察到的温度激活和限制增强弛豫可以用非绝热电子-声子相互作用引发的有效多声子发射来解释，并且表明了大的、与尺寸有关的带内Huang-Rhys参数。
We observe ultrafast 1P-to-1S intraband relaxation in PbSe and CdSe nanocrystals (NCs) that have distinct energy spectra. While ultrafast dynamics in CdSe NCs has typically been interpreted in terms of electron-hole energy transfer, this mechanism is not active in PbSe NCs because of sparse densities of states in the conduction and valence bands. Our observations of temperature activation and confinement-enhanced relaxation in PbSe NCs can be explained by efficient multiphonon emission triggered by nonadiabatic electron-phonon interactions and are indicative of large, size-dependent, intraband Huang-Rhys parameters.