Enhanced Thermoelectric Performance in 18-Electron Nb0.8CoSb Half-Heusler Compound with Intrinsic Nb Vacancies
Enhanced Thermoelectric Performance in 18-Electron Nb0.8CoSb Half-Heusler Compound with Intrinsic Nb Vacancies
复制标题
具有本征 Nb 空位的 18 电子 Nb0.8CoSb Half Heusler 化合物的热电性能增强
DOI：
10.1002/adfm.201705845
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发表时间：
2018-02-28
影响因子：
19
通讯作者：
Zhu, Tiejun
中科院分区：
文献类型：
--
作者：
Xia, Kaiyang;Liu, Yintu;Zhu, Tiejun
典型的18电子半身化合物ZRNISN和NBFESB被确定为有希望的高温热电材料。据报道，NBCOSB具有标称为19个价电子，最近也据报道还具有重掺杂的N型半导体的热电性能。在这里，第一次，实验证明了名义19-电子NBCOSB实际上是18电子NB0.8+delta cosb的综合（0
Typical 18-electron half-Heusler compounds, ZrNiSn and NbFeSb, are identified as promising high-temperature thermoelectric materials. NbCoSb with nominal 19 valence electrons, which is supposed to be metallic, is recently reported to also exhibit thermoelectric properties of a heavily doped n-type semiconductor. Here for the first time, it is experimentally demonstrated that the nominal 19-electron NbCoSb is actually the composite of 18-electron Nb0.8+delta CoSb (0