Planar Nernst effect and Mott relation in (In,Fe)Sb ferromagnetic semiconductor
Planar Nernst effect and Mott relation in (In,Fe)Sb ferromagnetic semiconductor
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DOI：
10.1063/1.5026452
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发表时间：
2018-05
影响因子：
3.2
通讯作者：
C. Bui;Christina A. C. Garcia;N. Tu;Masaaki Tanaka;P. Hai
中科院分区：
文献类型：
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作者：
C. Bui;Christina A. C. Garcia;N. Tu;Masaaki Tanaka;P. Hai
在平面磁场作用下，研究了（in,Fe）Sb铁磁半导体薄膜的横向磁热电效应。我们发现热电压受平面能司特效应的支配。我们发现横向塞贝克系数的磁场强度依赖性、磁场方向依赖性和温度依赖性可以通过假设（in,Fe）Sb中的平面内磁输运和磁热电现象之间存在莫特关系来解释。
Transverse magneto-thermoelectric effects were studied in an (In,Fe)Sb ferromagnetic semiconductor thin film under an in-plane magnetic field. We find that the thermal voltage is governed by the planar Nernst effect. We show that the magnetic field intensity dependence, magnetic field direction dependence, and temperature dependence of the transverse Seebeck coefficient can be explained by assuming a Mott relation between the in-plane magneto-transport and magneto-thermoelectric phenomena in (In,Fe)Sb.