Geometrically enhanced extraordinary magnetoresistance in semiconductor-metal hybrids
Geometrically enhanced extraordinary magnetoresistance in semiconductor-metal hybrids
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DOI：
10.1103/physrevb.82.212404
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发表时间：
2010-12-13
影响因子：
3.7
通讯作者：
Kusmartsev, F. V.
中科院分区：
文献类型：
--
作者：
Hewett, T. H.;Kusmartsev, F. V.
在半导体材料中嵌入金属夹杂物的混合系统中会产生异常磁电阻效应。我们已经调查了这样的系统与使用有限元建模，我们的结果显示出良好的协议，现有的实验数据。我们发现，这种效果可以显着增强超过四个数量级的导电区域的几何形状的改变的结果。这一结果的意义在于其潜在的应用EMR磁场传感器利用更熟悉的半导体材料与非最佳材料参数，如硅。我们的模型已被进一步扩展的几何结构的基础上的银硫族化物，由一个随机大小和位置的金属网络与散布液滴。该模型显示出与实验结果类似的大的准线性磁电阻。
Extraordinary magnetoresistance (EMR) arises in hybrid systems consisting of semiconducting material with an embedded metallic inclusion. We have investigated such systems with the use of finite-element modeling, with our results showing good agreement to existing experimental data. We show that this effect can be dramatically enhanced by over four orders of magnitude as a result of altering the geometry of the conducting region. The significance of this result lies in its potential application to EMR magnetic field sensors utilizing more familiar semiconducting materials with nonoptimum material parameters, such as silicon. Our model has been extended further with a geometry based on the microstructure of the silver chalcogenides, consisting of a randomly sized and positioned metallic network with interspersed droplets. This model has shown a large and quasilinear magnetoresistance analogous to experimental findings.