Improved luminance intensity of InGaN-GaN light-emitting diode by roughening both the p-GaN surface and the undoped-GaN surface
Improved luminance intensity of InGaN-GaN light-emitting diode by roughening both the p-GaN surface and the undoped-GaN surface
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DOI：
10.1063/1.2236462
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发表时间：
2006-07
影响因子：
4
通讯作者：
W. Peng;Y. S. Wu
中科院分区：
文献类型：
--
作者：
W. Peng;Y. S. Wu
采用低压金属有机物化学气相沉积法在蓝宝石衬底上生长InGaN-GaN外延薄膜，然后采用表面粗糙化、键合和激光剥离技术制备了具有双粗糙表面（p-GaN和undoped-GaN）的发光二极管（LED）。结果表明，在注入电流为20 mA时，双粗糙化LED的正面亮度是普通LED的2.77倍。背面亮度强度是传统LED的2.37倍。这是因为双粗糙化表面可以提供光子从LED表面逃逸的多次机会，并且将最初从逃逸锥发射出的光子重定向回到逃逸锥中。
The InGaN–GaN epitaxial films were grown by low-pressure metal-organic chemical vapor deposition on a sapphire substrate, and then the light-emitting diode (LED) with double roughened (p-GaN and undoped-GaN) surfaces was fabricated by surface-roughening, wafer-bonding, and laser lift-off technologies. It was found that the front side luminance intensity of double roughened LED was 2.77 times higher than that of the conventional LED at an injection current of 20mA. The backside luminance intensity was 2.37 times higher than that of the conventional LED. This is because the double roughened surfaces can provide photons multiple chances to escape from the LED surface, and redirect photons, which were originally emitted out of the escape cone, back into the escape cone.