Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides
Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides
复制标题
原子电阻：过渡金属二硫属化物原子片中的非易失性电阻切换
DOI：
10.1021/acs.nanolett.7b04342
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发表时间：
2018-01-01
期刊：
影响因子：
10.8
通讯作者：
Akinwande, Deji
中科院分区：
文献类型：
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作者：
Ge, Ruijing;Wu, Xiaohan;Akinwande, Deji
最近，二维(2D)原子片激发了纳米科学的新思想，包括拓扑保护的电荷输运、(1‘2)空间分离激子、(3)和强各向异性热输运。(4)在这里，我们报道了夹在金属电极之间的单层原子片中稳定的非易失性电阻开关(NVRS)的有趣观测。在典型的半导体(MX2，M=Mo，W；和X=S，Se)过渡金属二卤化物(TMD)中观察到了NVRS，这暗示了这种现象在TMD单分子膜中的普遍性，并提供了自由形成的开关。NVRS现象被广泛归因于大块氧化物和电解液中的离子扩散、细丝和界面氧化还原(6-9)，这一现象激发了对原子薄片和导电电极之间尖锐界面上的缺陷、离子输运和能量学的新研究。我们的发现推翻了当代的观点，即由于泄漏电流，非易失性开关不能扩展到亚纳米级。(10)非易失性柔性存储结构中的新兴设备概念，以及大脑启发(神经形态)计算可能会从广阔的2D材料设计空间中受益匪浅。一个新的主要应用，零静态功率射频(RF)开关，展示了工作在50 GHz的单层开关。
Recently, two-dimensional (2D) atomic sheets have inspired new ideas in nanoscience including topologically protected charge transport,(1'2) spatially separated excitons,(3) and strongly anisotropic heat transport.(4) Here, we report the intriguing observation of stable nonvolatile resistance switching (NVRS) in single-layer atomic sheets sandwiched between metal electrodes. NVRS is observed in the prototypical semiconducting (MX2, M = Mo, W; and X = S, Se) transitional metal dichalcogenides (TMDs),(5) which alludes to the universality of this phenomenon in TMD monolayers and offers forming-free switching. This observation of NVRS phenomenon, widely attributed to ionic diffusion, filament, and interfacial redox in bulk oxides and electrolytes,(6-9) inspires new studies on defects, ion transport, and energetics at the sharp interfaces between atomically thin sheets and conducting electrodes. Our findings overturn the contemporary thinking that nonvolatile switching is not scalable to subnanometre owing to leakage currents.(10) Emerging device concepts in nonvolatile flexible memory fabrics, and brain-inspired (neuromorphic) computing could benefit substantially from the wide 2D materials design space. A new major application, zero-static power radio frequency (RF) switching, is demonstrated with a monolayer switch operating to 50 GHz.