Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device
Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device
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DOI：
10.1088/0957-4484/22/25/254023
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发表时间：
2011-06-24
期刊：
影响因子：
3.5
通讯作者：
Hwang, Hyunsang
中科院分区：
文献类型：
--
作者：
Seo, Kyungah;Kim, Insung;Hwang, Hyunsang
我们展示了模拟记忆，突触可塑性，和尖峰定时依赖性（STDP）的功能与纳米氧化钛双层电阻开关器件具有简单的制造工艺和良好的产量均匀性。我们确认了多层电导和模拟存储器的特性，以及电导变化的准确性的均匀性和分离状态。最后，STDP和生物三重模型进行了分析，以证明在神经形态器件的二氧化钛双层电阻开关器件作为突触的潜力。通过开发一个简单的电阻开关器件，可以模拟突触功能，在大脑中的突触的独特特性，例如，在一个突触和适应外部环境相结合的记忆和计算，被成功地证明在固态设备。
We demonstrated analog memory, synaptic plasticity, and a spike-timing-dependent plasticity (STDP) function with a nanoscale titanium oxide bilayer resistive switching device with a simple fabrication process and good yield uniformity. We confirmed the multilevel conductance and analog memory characteristics as well as the uniformity and separated states for the accuracy of conductance change. Finally, STDP and a biological triple model were analyzed to demonstrate the potential of titanium oxide bilayer resistive switching device as synapses in neuromorphic devices. By developing a simple resistive switching device that can emulate a synaptic function, the unique characteristics of synapses in the brain, e.g. combined memory and computing in one synapse and adaptation to the outside environment, were successfully demonstrated in a solid state device.