MCT planar p-on-n LW and VLW IRFPAs
MCT planar p-on-n LW and VLW IRFPAs
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MCT 平面 pon-n LW 和 VLW IRFPA
DOI：
10.1117/12.2016369
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
J. Peyrard
中科院分区：
文献类型：
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作者：
N. Baier;L. Mollard;O. Gravrand;G. Bourgeois;J. Zanatta;G. Destefanis;O. Boulade;V. Moreau;F. Pinsard;L. Tauziède;A. Bardoux;L. Rubaldo;A. Kerlain;J. Peyrard
本文报道了用液相外延(LPE)红外焦平面阵列(IR FPA)生长的p-on-n-n HgCdTe(MCT)在CEA/LETI和SofRadir两种情况下的长波(LW)和甚长波(VLW)光谱范围的研究结果。多年来，p-on-n砷离子注入平面技术在联合实验室DEFIR的框架内得到了发展和改进。与n-on-p相比，p-on-n技术具有更低的暗电流和串联电阻。因此，p-on-n光电二极管非常适合在高温或极低流量下运行的超大型FPA。长波(LW)光谱范围首先用TV/4，30微米间距的FPA解决。我们的结果显示了最先进的探测器性能，符合“规则07”定律[1]，这是光电二极管技术成熟度的相关指标。低暗电流允许在不降低性能的情况下提高工作温度。随之而来的p-on-n成像仪的发展产生了更紧凑、更少能耗的系统，并大大提高了分辨率。空间应用是另一个令人兴奋但具有挑战性的领域，是p-on-n技术的很好候选者。为此，已经制造了用于超长波谱范围的30微米像素间距的TV/4阵列。对于这个探测范围，材料的质量和工艺的可靠性是最关键的。制作了不同截止波长的探测器，分别在78K、40K和78K时瞄准12.5微米、12.5微米和15微米。光电特性表明，均匀的成像器具有出色的电流操作能力(最高可达99.9%以上)。结果表明，p-on-n技术具有很好的质量，载流子扩散有限，暗电流符合“规则07”，并且量子效率很高。为了提高光电二极管的性能，已经进行了进一步的工艺开发。特别是暗电流从扩散限制区向另一个扩散限制区转变的转变温度降低了10K以上。获得了极低的暗电流，最低可达50e-/S/像素。
In this paper, we report on results obtained both at CEA/LETI and SOFRADIR on p-on-n HgCdTe (MCT) grown by liquid phase epitaxy (LPE) Infra-Red Focal Plane Arrays (IR FPAs) for the Long-wave (LW) and the Very-long-wave (VLW) spectral ranges. For many years, p-on-n arsenic-ion implanted planar technology has been developed and improved within the framework of the joint laboratory DEFIR. Compared to n-on-p, p-on-n technology presents lower dark current and series resistance. Consequently, p-on-n photodiodes are well-adapted for very large FPAs operating either at high temperature or very low flux. The long wave (LW) spectral ranges have been firstly addressed with TV/4, 30 µm pitch FPAs. Our results showed state-of-the-art detector performances, consistent with "Rule 07" law [1], a relevant indicator of the maturity of photodiode technology. The low dark current allows increasing the operating temperature without any degradation of the performances. The subsequent development of p-on-n imagers has produced more compact, less energy consuming systems, with a substantial resolution enhancement. Space applications are another exciting but challenging domains and are good candidates for the p-on-n technology. For this purpose, TV/4 arrays, 30 µm pixel pitch, have been manufactured for the very long wave spectral range. For this detection range, the quality of material and reliability of technology are the most critical. Detectors with different cutoff wavelength have been manufactured to aim 12.5 µm at 78K, 12.5 µm at 40K and 15 µm at 78K. Electro-optical characterizations reveal homogeneous imagers with excellent current operabilities (over 99.9% at best). The results highlight the very good quality of p-on-n technology with carrier diffusion limited dark current, fitting the "Rule 07" law, and high quantum efficiency. Further process developments have been made to improve photodiodes performances. Especially the transition temperature where the dark current shifts from diffusion limited regime to another one, has been lowered by more than 10K. Extremely low dark current has been obtained, down to 50 e-/s/pixel.