Enhanced Ionic Sensitivity in Solution-Gated Graphene-Hexagonal Boron Nitride Heterostructure Field-Effect Transistors
Enhanced Ionic Sensitivity in Solution-Gated Graphene-Hexagonal Boron Nitride Heterostructure Field-Effect Transistors
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DOI：
10.1002/admt.201800133
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发表时间：
2018-08-01
影响因子：
6.8
通讯作者：
Radadia, Adarsh D.
中科院分区：
文献类型：
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作者：
Hasan, Nowzesh;Hou, Bo;Radadia, Adarsh D.
溶液门控石墨烯器件中的电荷输运受到下面的电介质界面的杂质和无序及其与溶液的相互作用的影响。报道了通过在石墨烯和二氧化硅之间制造介电同晶六方氮化硼的溶液栅控石墨烯场效应晶体管的场效应离子传感的进展。离子灵敏度的狄拉克电压高达-198 mV每十倍的K+和-110 mV每十倍的Ca（2+）的记录。由于电荷载流子迁移率的增加而增加的载流子迁移率伴随着由于电荷载流子迁移率的更大的离子灵敏度而增加的载流子迁移率的更大的离子灵敏度。这些发现为构建未来用于生物传感和生物电子应用的石墨烯器件定义了标准。
The charge transport in solution-gated graphene devices is affected by the impurities and disorder of the underlying dielectric interface and its interaction with the solution. Advancement in field-effect ion sensing by fabricating a dielectric isomorph, hexagonal boron nitride between graphene and silicon dioxide of a solution-gated graphene field-effect transistor is being reported. Ionic sensitivity of Dirac voltage as high as -198 mV per decade for K+ and -110 mV per decade for Ca(2+ )is recorded. Increased transconductance due to increased charge carrier mobility is accompanied with larger ionic sensitivity of the transconductance due to larger ionic sensitivity of the charge carrier mobility. These findings define a standard to construct future graphene devices for biosensing and bioelectronics applications.