Test of the scaling theory in two dimensions in the presence of valley splitting and intervalley scattering in Si-MOSFETs
Test of the scaling theory in two dimensions in the presence of valley splitting and intervalley scattering in Si-MOSFETs
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DOI：
10.1103/physrevb.82.201308
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发表时间：
2010-11-12
影响因子：
3.7
通讯作者：
Kravchenko, S. V.
中科院分区：
文献类型：
--
作者：
Punnoose, Alexander;Finkel'stein, Alexander M.;Kravchenko, S. V.
我们发现，一旦谷分裂和谷间散射的影响被纳入，双参数标度理论一致地描述了硅金属氧化物半导体场效应晶体管中的金属相下降到最低可访问的温度。定量地解释了所观察到的电导和有效电子-电子相互作用幅度随温度降低而大幅增强的现象。
We show that once the effects of valley splitting and intervalley scattering are incorporated, the two-parameter scaling theory consistently describes the metallic phase in silicon metal-oxide-semiconductor field-effect transistors down to the lowest accessible temperatures. The observed large enhancement of the conductance and the effective electron-electron interaction amplitude as the temperature is lowered are explained quantitatively.