Submillimeter Wave Oscillation from GaAs Tunnett Diode
Submillimeter Wave Oscillation from GaAs Tunnett Diode
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GaAs Tunnett 二极管的亚毫米波振荡
DOI：
10.1109/euma.1979.332748
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发表时间：
1979
期刊：
影响因子：
--
通讯作者：
Y. Okuno
中科院分区：
文献类型：
--
作者：
J. Nishizawa;K. Motoya;Y. Okuno
隧道注入渡越时间负阻（Tunnett）二极管被认为是频率范围从100到1000 GHz的有用的有源器件，并且将被定位为GaAs静电感应晶体管（SIT）与拉曼和布里渊激光器之间的半导体器件。Tunnett二极管具有很低的噪声特性，工作电压低于10 V。采用一种新的LPE（TDM under CVP）方法制备了具有p+-n，p+-n-n+和p+-n+-n-n+结构的GaAs Tunnett二极管。在偏置功率为8.6W时，用脉冲驱动GaAsp ~+-n-n ~+二极管获得了频率达338 GHz（<$= 0.89mm）的亚毫米波基波振荡。所制作的肖特基势垒二极管（Pt-n-n+）的振荡频率为153 GHz，与GaAs p-n结Tunnett二极管相比，具有较大的温度依赖性和较低的效率。用于振荡的最低直流功率不足以实现CW操作，并且期望通过引入新设计来改进，并且还将讨论p+-n+-n-n+结构和冈内特二极管。
The Tunnel injection transit time negative resistance (Tunnett) diode has been thought to be useful active device in the frequency range from 100 to 1000 GHz and will be positioned as a semiconductor device between the GaAs static induction transistor (SIT) and Raman- and Brillouin-lasers. Tunnett diode shows very low noise properties and operates with low applied voltage less than 10 V. GaAs Tunnett diodes with p+-n, p+-n-n+ and p+-n+-n-n+ structures have been fabricated by a new LPE (TDM under CVP) method. The submillimeter wave fundamental oscillation up to 338 GHz (¿=0.89 mm) has been obtained from the pulse driven GaAs p+-n-n+ diode at biasing power of 8.6 W. The oscillation frequency of the Schottky barrier diode (Pt-n-n+) fabricated has been 153 GHz and shows larger temperature dependence and lower efficiency than those of the GaAs p-n junction Tunnett diode. The lowest d.c. power for the oscillation has not been enough to achieve the CW operation and is expected to be improved by the introduction of the new design and also the p+-n+-n-n+ structure and the Gunnett diode will be discussed.