Germanium for High Performance MOSFETs and Optical Interconnects
Germanium for High Performance MOSFETs and Optical Interconnects
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用于高性能 MOSFET 和光学互连的锗
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
Hyun‐Yong Yu
中科院分区：
文献类型：
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作者：
K. Saraswat;Donghyun Kim;T. Krishnamohan;Duygii Kuzum;A. Okyay;A. Pethe;Hyun‐Yong Yu
人们相信，为了继续缩小硅 CMOS 的尺寸，必须创造创新的器件结构和新材料，以继续信息处理和传输方面的历史性进步。最近，锗已成为增强 CMOS 和光电应用中硅的可行候选者。在这项工作中，我们将首先回顾在硅上生长Ge薄膜和厚膜、适当清洁Ge的技术、使用高介电质的表面钝化、以及非晶Ge的金属诱导结晶和掺杂剂激活的最新成果。接下来我们将回顾Ge在高性能MOSFET中的应用。创新的 Si/Ge MOS 异质结构将被描述为具有高导通电流和低截止电流。最后，我们将描述用于片上和片外互连的光学检测器和调制器。 Ge 在 Si 上的成功集成将允许硅 CMOS 继续微缩至 22 nm 以下节点。
It is believed that to continue the scaling of silicon CMOS innovative device structures and new materials have to be created in order to continue the historic progress in information processing and transmission. Recently germanium has emerged as a viable candidate to augment Si for CMOS and optoelectronic applications. In this work we will first review recent results on growth of thin and thick films of Ge on Si, technology for appropriate cleaning of Ge, surface passivation using high-� dielectrics, and metal induced crystallization of amorphous Ge and dopant activation. Next we will review application of Ge for high performance MOSFETs. Innovative Si/Ge MOS heterostructures will be described with high on current and low off currents. Finally we will describe optical detectors and modulators for on-chip and off-chip interconnect. Successful integration of Ge on Si should allow continued scaling of silicon CMOS to below 22 nm node.