Photoconductivity of InN grown by MOVPE: Low temperature and weak light illumination
Photoconductivity of InN grown by MOVPE: Low temperature and weak light illumination
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MOVPE生长InN的光电导：低温弱光照射
DOI：
10.1063/1.4974999
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发表时间：
2017-01-23
影响因子：
4
通讯作者：
Yamamoto, Akio
中科院分区：
文献类型：
--
作者：
Kang, Ting-Ting;Zhang, Yuhui;Yamamoto, Akio
用发光二极管代替激光器，在阻挡300K黑体辐射的情况下，研究了金属有机气相外延生长的InN薄膜在2.3K-280K温度下的光电导。尽管观察到了Inn的负PC，但它显示出快速响应，而不是先前使用激光进行的PC测量所描述的“持久的”响应。利用光热效应(LHE)实验证明了一种人造的“持久负性PC”。快速响应的负PC随温度的升高而减弱，对光强的依赖性较小。进一步的分析表明，InN中所谓的“持续光导”可能被认为是LHE。由AIP出版公司出版。
Using a light-emitting diode instead of a laser, we study the photoconductivity (PC) in the metalorganic vapor phase epitaxy grown InN films under 2.3 K-280K temperature with blocked 300K blackbody radiation. Although InN's negative PC was observed, it shows a quick response, not a "persistent" one as previously described by PC measurements using laser. An artificial "persistent negative PC" has been experimentally demonstrated by the light heating effect (LHE). The quick response negative PC is weakened by increased temperature and is less dependent on the light intensity. Further analyses show that the so-called "persistent photoconductivity" in InN might be justified as LHE. Published by AIP Publishing.