A SiGe V-band x8 frequency multiplier with high spectral purity
A SiGe V-band x8 frequency multiplier with high spectral purity
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DOI：
10.1109/eumic.2015.7345072
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发表时间：
2015-12
期刊：
影响因子：
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通讯作者：
N. Mazor;O. Katz;B. Sheinman;R. Carmon;R. Ben-Yishay;Run Levinger;A. Bruetbart;D. Elad
中科院分区：
文献类型：
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作者：
N. Mazor;O. Katz;B. Sheinman;R. Carmon;R. Ben-Yishay;Run Levinger;A. Bruetbart;D. Elad
采用IBM0.13 μ mSiGe工艺实现了一种适用于上下E波段收发器的紧凑型八倍频器。采用三个倍频级，在前两个倍频级进行谐波抑制，以获得宽带频谱纯度。在输入功率为0 dBm时，该倍频器在56 ~ 84 GHz范围内输出功率大于7.5 dBm，峰值输出功率为13.5 dBm。所有偶次谐波：2次、4次、6次、10次，在整个频带内均被抑制40 dBc以上。此外，在-40 ° C至85°C的温度范围内，6次和10次谐波抑制超过40 dBc。该电路支持四倍频器的额外输入选项，占用1.23×1.1 mm 2，2.7 V电源供电时功耗为152 mA。
A compact frequency octupler designed for upper and lower E-band transceivers is implemented in IBM 0.13μm SiGe technology. Three frequency doubler stages are used with harmonic rejection conducted at the first two doublers for wide band spectral purity. With a 0 dBm input power, the frequency octupler reaches above 7.5 dBm output power between 56 GHz to 84 GHz with a peak output power of 13.5 dBm. All even harmonics: 2nd, 4th, 6th, 10th, are suppressed by more than 40 dBc across the frequency band. Moreover, the 6th and 10th harmonics are suppressed by over 40 dBc at temperatures between -40°C to 85°C. The circuit enables an extra input option of a frequency quadrupler and occupies 1.23×1.1 mm2 and consumes 152 mA from a 2.7 V supply.