Orientation dependence of nanoindentation pile-up patterns and of nanoindentation microtextures in copper single crystals
Orientation dependence of nanoindentation pile-up patterns and of nanoindentation microtextures in copper single crystals
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DOI：
10.1016/j.actamat.2004.01.016
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发表时间：
2004-05-03
期刊：
影响因子：
9.4
通讯作者：
Roters, F
中科院分区：
文献类型：
--
作者：
Wang, Y;Raabe, D;Roters, F
我们利用高纯度铜单晶进行了一项关于纳米压痕堆积模式以及微观织构对晶体学取向依赖性的研究。实验是在Hysitron纳米压痕装置上进行的，使用锥形压头以避免除晶体结构对称性之外的其他对称性。利用高分辨率电子背散射衍射技术进行取向测量，以便自动获取压痕周围的织构映射。通过一种三维弹黏塑性晶体塑性有限元方法进行模拟，该方法充分考虑了压痕过程中的晶体滑移和取向变化。实验以及模拟表明，(0 0 1)、(0 1 1)和(1 1 1)取向单晶表面的堆积模式分别具有四重、两重和六重对称性。不同的堆积模式可以根据压痕周围平面外位移的强烈晶体学各向异性来解释。明显的材料堆积形成特征性的堆积模式，沿着主晶体学滑移面和被压表面平面之间的交线向量发生。(C) 2004 Acta Materialia Inc. 由Elsevier Ltd.出版。保留所有权利。
We present a study about the dependence of nanoindentation pile-up patterns and of microtextures on the crystallographic orientation using high purity copper single crystals. Experiments were conducted on a Hysitron nanoindentation setup using a conical indenter in order to avoid symmetries others than those of the crystal structure. Orientation measurements were conducted using a high resolution electron back-scatter diffraction technique for the automated acquisition of texture mappings around the indents. Simulations were carried out by means of a 3D elastic-viscoplastic crystal plasticity finite element method which takes full account of crystallographic slip and orientation changes during indentation. The experiments as well as the simulations show that the pile-up patterns on the surfaces of (0 0 1)-, (0 1 1)- and (1 1 1)-oriented single crystals have four-, two-, and sixfold symmetry, respectively. The different pile-up patterns can be explained in terms of the strong crystallographic anisotropy of the out-of-plane displacements around the indents. Pronounced accumulation of material entailing characteristic pile-up patterns occurs along the intersection vectors between the primary crystallographic slip planes and the indented surface planes. (C) 2004 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.