Issues on nanoimprint lithography with a single-layer resist structure
Issues on nanoimprint lithography with a single-layer resist structure
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单层抗蚀剂结构纳米压印光刻问题
DOI：
10.1007/s00339-005-3313-2
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
R. S. Williams
中科院分区：
文献类型：
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作者：
G. Jung;W. Wu;S. Ganapathiappan;D. Ohlberg;M. Saif Islam;X. Li;D. Olynick;H. Lee;Y. Chen;S. Y. Wang;W. Tong;R. S. Williams
我们总结了我们在纳米压印光刻（NIL），采用单层抗蚀剂剥离过程中的关键发展：降低压印温度（热压印）和压力，实现均匀的抗蚀剂厚度和低残留抗蚀剂层厚度的沟槽，并消除金属“兔子耳朵”的单层剥离。在热NIL中，我们对较低工作温度和压力的要求促使我们开发了一种替代抗蚀剂，该抗蚀剂在室温下是粘性流体，并且在比传统热NIL的工作温度（约200 °C）低70 °C的温度下固化。对于UV NIL，我们设计了一种方法，将抗蚀剂分配到疏水模具上，并使用亲水性基底表面通过表面润湿来铺展抗蚀剂，以设计连续且均匀的膜。我们还探索了使用Si（110）衬底作为模具来产生具有完全垂直的侧壁的特征，以及使用王水来直接蚀刻掉兔耳。
We summarize our key developments in nanoimprint lithography (NIL) that employs a single layer resist lift-off process: lowering of the imprint temperature (for thermal imprint) and pressure, achieving uniform resist thickness and low residual resist layer thickness in the trenches, and eliminating metal ‘rabbit ears’ for the single-layer lift-off. In thermal NIL, our requirements for lower operating temperature and pressure motivated us to develop an alternative resist that is a viscous fluid at room temperature and cures at a lower temperature of 70 °C than the operating temperature of the conventional thermal NIL (≈200 °C). For UV NIL, we devised a method to dispense the resist onto a hydrophobic mold and use the hydrophilic substrate surface to spread the resist via surface wetting to engineer a continuous and uniform film. We also explored the use of Si(110) substrates as molds to produce features with perfectly vertical side walls, and the use of aqua regia to directly etch away rabbit ears.