Rapid Single Flux Quantum T-flip flop operating up to 770 GHz
Rapid Single Flux Quantum T-flip flop operating up to 770 GHz
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DOI：
10.1109/77.783712
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发表时间：
1999-06-01
影响因子：
1.8
通讯作者：
Likharev, KK
中科院分区：
文献类型：
--
作者：
Chen, W;Rylyakov, AV;Likharev, KK
快速单通量量子（RSFQ）T触发器（TFFs）的工作频率高达770 GHz的已被证明在4.2 K的设备，包括无论是并联或非并联约瑟夫森结，使用平面化的Nb/AlOx/Nb三层工艺制造。电子束光刻用于图案的最小结面积小于0.1 μ m（2）的所有级别。0.5 mA/μ m（2）和2.5 mA/μ m（2）的临界电流密度分别用于分流（在1.8 K下测试）和未分流的设备（在4.2 K下测试）。TFF的输入和输出频率由输入和输出电压通过约瑟夫森关系获得。当二分频操作正确时，输出电压正好是输入电压的一半。
Rapid Single Flux Quantum (RSFQ) T-flip flops (TFFs) operating up to 770 GHz have been demonstrated at 4.2 K The devices, consisting of either resistively shunted or unshunted Josephson junctions, are fabricated using a planarized Nb/AlOx/Nb trilayer process. Electron beam lithography is used to pattern all levels with a minimum junction area less than 0.1 mu m(2). Critical current densities of 0.5 mA/mu m(2) and 2.5 mA/mu m(2) are used for the shunted (tested at 1.8 k) and unshunted devices (tested at 4.2 K) respectively. The input and output frequencies of the TFFs are obtained from the input and output voltages by the Josephson relation. The output voltage is exactly half of the input voltage when the divide-by-two operation is correct.