Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy -: The influence of Si- and Mg-doping
Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy -: The influence of Si- and Mg-doping
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DOI：
10.1063/1.2953087
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发表时间：
2008-08-01
影响因子：
3.2
通讯作者：
Eickhoff, Martin
中科院分区：
文献类型：
--
作者：
Furtmayr, Florian;Vielemeyer, Martin;Eickhoff, Martin
研究了富氮条件下等离子体辅助分子束外延在Si（111）衬底上自组装生长GaN纳米棒。在生长的初始阶段形成非晶氮化硅层，其防止GaN润湿层的形成。成核时间被认为是强烈的影响，由衬底温度和超过30分钟的应用生长条件。所观察到的锥形和减少的长度的硅掺杂的纳米棒的非极性刻面上的增强的成核解释，并证明作为一个贡献的轴向生长的纳米棒侧壁上的Ga吸附原子扩散。Mg的存在导致径向生长速率增加，同时纳米棒长度减少，并减少高Mg浓度的成核时间。(C)2008年美国物理研究所。
The self-assembled growth of GaN nanorods on Si (111) substrates by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions is investigated. An amorphous silicon nitride layer is formed in the initial stage of growth that prevents the formation of a GaN wetting layer. The nucleation time was found to be strongly influenced by the substrate temperature and was more than 30 min for the applied growth conditions. The observed tapering and reduced length of silicon-doped nanorods is explained by enhanced nucleation on nonpolar facets and proves Ga-adatom diffusion on nanorod sidewalls as one contribution to the axial growth. The presence of Mg leads to an increased radial growth rate with a simultaneous decrease of the nanorod length and reduces the nucleation time for high Mg concentrations. (C) 2008 American Institute of Physics.