Preparation and characterization of Er-doped AlN films by RF magnetron sputtering
Preparation and characterization of Er-doped AlN films by RF magnetron sputtering
复制标题
射频磁控溅射掺铒AlN薄膜的制备及表征
DOI：
10.1016/j.matlet.2017.12.111
复制
发表时间：
2017
影响因子：
3
通讯作者：
Chengtao Yang
中科院分区：
文献类型：
--
作者：
Hu Xianwei;Tai Zhiwei;Chengtao Yang
采用射频磁控溅射技术，在不同温度下在蓝宝石衬底上沉积了掺铒AlN薄膜。我们系统地研究了衬底温度对薄膜晶体结构和压电性能的影响。因此，随着衬底温度的升高，（0 0 2）取向峰的XRD强度先增大后减小，在200 ℃时达到最大值，形成高度C轴的柱状晶体结构。在衬底温度为200 ℃时，压电常数d33的最大值为9.41 pm/V。由于在氮化铝薄膜中掺杂铒，其晶体结构和压电性能得到了改善。
Er-doped AlN thin films were deposited by RF magnetron sputtering on (0001) sapphire substrates under different temperature. We systematically investigate the influence of substrate temperature on the crystalline structure and the piezoelectric properties of the films. Consequently, the XRD intensity of (0 0 2) oriented peak first increases and then decreases with increasing substrate temperature, reaching a maximum value and a highly c-axis columnar crystal structure at 200 °C. The piezoelectric constant d33indicates a maximum value of 9.41 pm/V at substrate temperature of 200 °C.Due to Er doping in AlN films, an improvement in their crystalline structures and piezoelectric properties is noticed.