Segregation of In to Dislocations in InGaN
Segregation of In to Dislocations in InGaN
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DOI：
10.1021/nl5036513
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发表时间：
2015-02-01
期刊：
影响因子：
10.8
通讯作者：
Moram, Michelle A.
中科院分区：
文献类型：
--
作者：
Horton, Matthew K.;Rhode, Sneha;Moram, Michelle A.
位错是一维拓扑缺陷，经常出现在功能薄膜材料中，它会降低InxGa1-xN光电子器件的性能。在这里，我们表明，在InxGa1-xN合金薄膜中，合金成分和原子结构的大的局域偏差预计会发生在位错核内部和周围。我们给出了支持这一结果的能量色散X射线光谱数据。本文提出的方法也广泛适用于预测其他无机功能材料薄膜中与应变场相关的成分波动。
Dislocations are one-dimensional topological defects that occur frequently in functional thin film materials and that are known to degrade the performance of InxGa1-xN-based optoelectronic devices. Here, we show that large local deviations in alloy composition and atomic structure are expected to occur in and around dislocation cores in InxGa1-xN alloy thin films. We present energy-dispersive X-ray spectroscopy data supporting this result. The methods presented here are also widely applicable for predicting composition fluctuations associated with strain fields in other inorganic functional material thin films.