Rewritable nanopattern on a Ge(001) surface utilizing p(2×2)-to-c(4×2) transition of surface reconstruction induced by a scanning tunneling microscope
Rewritable nanopattern on a Ge(001) surface utilizing p(2×2)-to-c(4×2) transition of surface reconstruction induced by a scanning tunneling microscope
复制标题
利用扫描隧道显微镜诱导的表面重建的 p(2×2) 到 c(4×2) 转变在 Ge(001) 表面上可重写纳米图案
DOI：
10.1063/1.1668324
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发表时间：
2004
影响因子：
4
通讯作者：
F. Komori
中科院分区：
文献类型：
--
作者：
Y. Takagi;M. Yamada;K. Nakatsuji;F. Komori
我们提出了在80 K下在Ge（001）上形成的纳米尺度图案，这是基于扫描隧道显微镜（STM）诱导的c（4×2）和p（2×2）表面重构之间的转变。我们发现，负的（−0.8 V和0.5 s）采样偏置电压脉冲在p（2×2）重构区域中产生了一个c（4×2）重构域，大小为1.6×2.0 nm 2。在适当的位置施加负脉冲，形成了c（4×2）重建的预定图形。图案化的过程可以通过STM以小的偏置电压（-0.2 V）进行监控，而不会影响写入的图案。整个区域可以通过使用+0.8V的偏置电压的扫描初始化为p（2×2）。
We present rewritable, nanometer-scale patterns formed on Ge(001) at 80 K, which are based on the transition between c(4×2) and p(2×2) surface reconstructions induced by a scanning tunneling microscope (STM). We have found that a negative (−0.8 V and 0.5 s) sample bias voltage pulse creates a c(4×2)-reconstructed domain of ∼1.6×2.0 nm2 in a p(2×2)-reconstructed region. Applying the negative pulses at approriate positions, we form an intended pattern of the c(4×2) reconstruction. The course of patterning can be monitored by STM with a small bias voltage (−0.2 V) without affecting the written pattern. The whole region can be initialized to the p(2×2) by a scan with the bias voltage of +0.8 V.