High-Performance 500 V Quasi- and Fully-Vertical GaN-on-Si pn Diodes
High-Performance 500 V Quasi- and Fully-Vertical GaN-on-Si pn Diodes
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DOI：
10.1109/led.2016.2646669
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发表时间：
2017-02
影响因子：
4.9
通讯作者：
Yuhao Zhang;D. Piedra;Min-Chul Sun;J. Hennig;A. Dadgar;Lili Yu;T. Palacios
中科院分区：
文献类型：
--
作者：
Yuhao Zhang;D. Piedra;Min-Chul Sun;J. Hennig;A. Dadgar;Lili Yu;T. Palacios
This letter demonstrates quasi- and fully vertical GaN-on-Si pn diodes with record performance. The optimized device structure employs a highly conductive ( $\text{N}_{\mathrm { {D}}}> 10^{\mathrm { {20}}}$ cm $^{\mathrm { {-3}}}$ ) current collecting layer and a lightly carbon-doped drift layer. With this optimization, a differential specific $on$ -resistance ( ${R} _{ {\mathrm{ ON}}}$ ) of 0.8–1 $\text{m}\Omega \cdot $ cm $^{\mathrm { {2}}}$ , a breakdown voltage (BV) over 500 V, and a high forward current (~kA/cm $^{\mathrm { {2}}}$ ) were demonstrated. Excellent ${R} _{ \mathrm{ ON}}$ and BV performance up to 300 °C were also obtained. A small reverse recovery time of 50 ns was demonstrated under switching conditions. With Baliga’s figure of merit over 0.32 GW/cm $^{\mathrm { {2}}}$ , these devices show the great potential of low-cost GaN-on-Si vertical devices for future power applications.
This letter demonstrates quasi- and fully vertical GaN-on-Si pn diodes with record performance. The optimized device structure employs a highly conductive ( $\text{N}_{\mathrm { {D}}}> 10^{\mathrm { {20}}}$ cm $^{\mathrm { {-3}}}$ ) current collecting layer and a lightly carbon-doped drift layer. With this optimization, a differential specific $on$ -resistance ( ${R} _{ {\mathrm{ ON}}}$ ) of 0.8–1 $\text{m}\Omega \cdot $ cm $^{\mathrm { {2}}}$ , a breakdown voltage (BV) over 500 V, and a high forward current (~kA/cm $^{\mathrm { {2}}}$ ) were demonstrated. Excellent ${R} _{ \mathrm{ ON}}$ and BV performance up to 300 °C were also obtained. A small reverse recovery time of 50 ns was demonstrated under switching conditions. With Baliga’s figure of merit over 0.32 GW/cm $^{\mathrm { {2}}}$ , these devices show the great potential of low-cost GaN-on-Si vertical devices for future power applications.