Self‐assembled InSb and GaSb quantum dots on GaAs(001)
Self‐assembled InSb and GaSb quantum dots on GaAs(001)
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GaAs(001)上自组装InSb和GaSb量子点
DOI：
10.1116/1.588898
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发表时间：
1996
影响因子：
1.4
通讯作者：
L. Whitman
中科院分区：
文献类型：
--
作者：
B. R. Bennett;P. Thibado;M. Twigg;E. Glaser;R. Magno;B. V. Shanabrook;L. Whitman
通过分子束外延在GaAs（001）上生长InSb和GaSb量子点。在InSb或GaSb生长1-2个单层后进行的原位扫描隧道显微镜测量显示表面是各向异性带状血小板的网络。这些血小板是量子点生长的前体。透射电子显微镜测量表明量子点是相干应变的。GaAs包覆的InSb和GaSb量子点在1.1eV附近有很强的发光。
Quantum dots of InSb and GaSb were grown on GaAs(001) by molecular‐beam epitaxy. In situ scanning tunneling microscopy measurements taken after 1–2 monolayers of InSb or GaSb growth reveal the surface is a network of anisotropic ribbon‐like platelets. These platelets are a precursor to quantum dot growth. Transmission electron microscopy measurements indicate that the quantum dots are coherently strained. Quantum dots of InSb and GaSb capped by GaAs exhibit strong luminescence near 1.1 eV.