Deep‐level transient spectroscopy and photoluminescence studies of electron‐irradiated Czochralski silicon
Deep‐level transient spectroscopy and photoluminescence studies of electron‐irradiated Czochralski silicon
复制标题
电子辐照直拉硅的深能级瞬态光谱和光致发光研究
DOI：
10.1063/1.337198
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发表时间：
1986
影响因子：
3.2
通讯作者：
J. Lindström
中科院分区：
文献类型：
--
作者：
O. Awadelkarim;H. Weman;B. Svensson;J. Lindström
在335 °C下对电子辐照直拉硅样品（n型）进行等温退火。使用深能级瞬态谱（DLTS）和光致发光（PL）研究了退火过程。直接在辐照后的DLTS光谱中的主导能级位于导带下方约0.18 eV，并且先前已被其他作者指定为空位-氧中心。在退火过程中，空位-氧中心的浓度降低，同时在导带以下约0.20 eV的新能级生长。它表明，引起这个新的水平的缺陷可能是空位有关。直接照射后的PL谱主要由G线（969 meV）和C线（790 meV）。G线迅速消失，而C线在335 °C下320分钟后仍然存在。在热处理过程中，出现了一些新的线，例如，P线（767 meV）和950 meV线。基于退火动力学，推测950-meV缺陷可能与空位有关。
Isothermal annealing of electron‐irradiated Czochralski silicon samples (n‐type) has been performed at 335 °C. The annealing process was studied using deep‐level transient spectroscopy (DLTS) and photoluminescence (PL). The dominating level in the DLTS spectra directly after irradiation is located ∼0.18 eV below the conduction band and has previously been assigned to a vacancy‐oxygen center by other authors. During the anneal the concentration of vacancy‐oxygen centers decreases, and simultaneously a new level, ∼0.20 eV below the conduction band, grows up. It is shown that the defect giving rise to this new level may be vacancy related. The PL spectra directly after irradiation are dominated by the G line (969 meV) and the C line (790 meV). The G line disappears rapidly, while the C line is still present after 320 min at 335 °C. During the heat treatment some new lines appear, e.g., the P line (767 meV) and a line at 950 meV. Based on the annealing kinetics, it is speculated that the 950‐meV defect may be vacancy related.