Thin bismuth film as a template for pentacene growth
Thin bismuth film as a template for pentacene growth
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DOI：
10.1063/1.1865350
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发表时间：
2005-02
影响因子：
4
通讯作者：
J. Sadowski;T. Nagao;S. Yaginuma;Y. Fujikawa;A. Al‐Mahboob;K. Nakajima;T. Sakurai;G. Thayer;R. Tromp
中科院分区：
文献类型：
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作者：
J. Sadowski;T. Nagao;S. Yaginuma;Y. Fujikawa;A. Al‐Mahboob;K. Nakajima;T. Sakurai;G. Thayer;R. Tromp
在室温条件下，采用真空沉积法在Si（111）-7×7表面上生长了Bi（001）薄膜，并在400 K下进行了退火处理，以降低薄膜表面的台阶密度，从而改善薄膜的形貌。退火的、有序的Bi（001）膜随后被用作并五苯（Pn）生长的衬底。已经使用低能电子显微镜确定，Pn在Bi（001）上成核成高度有序的结晶层，其中Pn分子“站立”在Bi表面上，并且（001）平面在生长前沿上。此外，Pn层与Bi（001）表面对齐，与衬底具有“点上线”相称的关系。Pn scinBi（001）膜直接从第一Pn层以块状结构结晶。在我们的实验中没有观察到的薄膜相的形成报道的二氧化硅和其他惰性基板上的Pn生长。
Thin Bi(001) films grown by ultrahigh vacuum deposition on Si(111)‐7×7 surfaces at room temperature, were annealed at ∼400K in order to improve their morphology by reducing the step density on the surface. Annealed, well-ordered Bi(001) films have been subsequently used as substrates for growth of pentacene (Pn). It has been determined using low-energy electron microscope that Pn nucleates on Bi(001) into a highly ordered, crystalline layer, with Pn molecules “standing up” on the Bi surface, and the (001) plane on the growth front. Moreover, the Pn layer is aligned with the Bi(001) surface having a “point-on-line” commensurate relationship with the substrate. The Pn∕Bi(001) film crystallizes in a bulk-like structure directly from the first Pn layer. Formation of the thin film phase reported for the Pn growth on SiO2 and other inert substrates was not observed in our experiments.