A novel lateral bipolar transistor with 67 GHz fmax on thin-film SOI for RF analog applications
A novel lateral bipolar transistor with 67 GHz fmax on thin-film SOI for RF analog applications
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DOI：
10.1109/16.848304
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发表时间：
2000-07-01
影响因子：
3.1
通讯作者：
Katsumata, Y
中科院分区：
文献类型：
--
作者：
Nii, H;Yamada, T;Katsumata, Y
提出了一种新型的SOI横向双极晶体管。由于发射极尺寸为0.12 × 3.0 μ m（2），新型Co硅化基极电极的基极电阻为270 Ω，SOI材料的基极-集电极寄生电容为1.4 fF，因此SOI双极晶体管的f（max）最高可达67 GHz。此外，实现了1.5 fF的低发射极-基极电容和2.5 fF的低集电极-衬底电容。该晶体管结构简单，制造工艺简单，不需要任何新的复杂技术。沟槽隔离和外延基极。这可以降低晶体管的制造成本。我们已经证明了横向双极晶体管的可能性，薄膜SOI作为下一代器件的RF模拟应用。
In this paper, a novel lateral bipolar transistor on thin film silicon-on-insulator (SOI) is presented. With a small emitter size of 0.12 x 3.0 mu m(2),low base resistance of 270 Omega due to a novel Co silicided base electrode and low base-collector parasitic capacitances of 1.4 fF due to SOI material achieve the highest f(max) of 67 GHz among the SOI bipolar transistors. Also, the low emitter-base capacitance of 1.5 fF and the low collector-substrate capacitance of 2.5 fF are realized. The transistor has a simple structure, which is fabricated with simplified processes without any new sophisticated technologies, ex. trench isolation and epitaxial base used in current bipolar transistors. This can lower the fabrication cost of transistors. We have demonstrated the possibility of lateral bipolar transistor on thin film SOI as next-generation device for RF analog applications.