Composition-Modulated Two-Dimensional Semiconductor Lateral Heterostructures via Layer-Selected Atomic Substitution
Composition-Modulated Two-Dimensional Semiconductor Lateral Heterostructures via Layer-Selected Atomic Substitution
复制标题
通过层选择原子取代的成分调制二维半导体横向异质结构
DOI：
10.1021/acsnano.6b07580
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发表时间：
2017-01-01
期刊：
影响因子：
17.1
通讯作者：
Pan, Anlian
中科院分区：
文献类型：
--
作者：
Li, Honglai;Wu, Xueping;Pan, Anlian
二维层状半导体异质结的组份控制生长对于其在多功能集成光电子学和光电子学器件中的应用至关重要。在这里，我们报道了通过对预生长的MoS_2进行可控层选择原子替代，实现复合完全调制的层状半导体MoS_2-MoS_2(1-x)Se2x(0<；x&t；1)横向异质结构，其中双层位于单层的中心。通过控制反应时间，Se原子可以选择性地取代位于MoS_2单层边缘区域的S，而位于中心的双层区域则保持了原有的组成。微观结构分析表明，薄膜形成了界面尖锐的横向异质结构，单层区的成分由MoS_2逐渐调制为MoSe_2，单层区和双层区都具有高质量的结晶。光致发光和拉曼光谱研究表明，只在生长的异质结的单层区域具有可调谐的光学性质，这进一步证明了高质量的组份/带隙调制横向异质结的实现。这项工作为开发高质量的层状半导体异质结提供了一条有趣而简单的路线，在集成纳米电子器件和光电子器件中具有潜在的广泛应用。
Composition-controlled growth of two-dimensional layered semiconductor heterostructures is crucially important for their applications in multifunctional integrated photonics and optoelectronics devices. Here, we report the realization of composition completely modulated layered semiconductor MoS2-MoS2(1-x)Se2x (0 < x < 1) lateral heterostructures via the controlled layer-selected atomic substitution of pregrown stacking MoS2, with a bilayer located at the center of a monolayer. Through controlling the reaction time, S at the monolayer MoS2 at the peripheral area can be selectively substituted by Se atoms at different levels, while the bilayer region at the center retains the original composition. Microstructure characterizations demonstrated the formation of lateral heterostructures with a sharp interface, with the composition at the monolayer area gradually modulated from MoS2 to MoSe2 and having high-quality crystallization at both the monolayer and the bilayer areas. Photoluminescence and Raman mapping studies exhibit the tunable optical properties only at the monolayer region of the as-grown heterostructures, which further demonstrates the realization of high-quality composition/bandgap modulated lateral heterostructures. This work offers an interesting and easy route for the development of high-quality layered semiconductor heterostructures for potential broad applications in integrated nanoelectronic and optoelectronic devices.