Monte Carlo simulation of ion implantation into two- and three-dimensional structures
Monte Carlo simulation of ion implantation into two- and three-dimensional structures
复制标题
离子注入二维和三维结构的蒙特卡罗模拟
DOI：
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发表时间：
1989
期刊：
影响因子：
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通讯作者：
S. Selberherr
中科院分区：
文献类型：
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作者：
G. Hobler;S. Selberherr
到目前为止，由于需要大量的计算机时间，对离子注入到3D结构中进行严格的Monte Carlo模拟已经被禁止，并且2D模拟已经被限制在简单的结构中，如线性掩模边缘或矩形沟槽。提出了方法，使2-D模拟与任意的几何形状，以及3-D模拟与简单的几何形状可行。首先，使用辅助网格来减少检查离子是否穿过边界所需的时间。第二，每个离子轨迹被多次使用，以确定在不同位置进入靶的离子的历史。该方法被证明由三个例子：注入到一个矩形的沟槽，注入到一个2-D的非平面侧壁的沟槽，和注入到一个3-D的沟槽与二次横截面。>
Until now, rigorous Monte Carlo simulations of ion implantation into 3-D structures have been prohibited by the large amount of computer time required, and 2-D simulations have been restricted to simple structures like linear mask edges or rectangular trenches. Methods are presented which made 2-D simulations with arbitrary geometries as well as 3-D simulations with simple geometries feasible. First, an auxiliary grid is used to reduce the time required to check whether an ion crosses a boundary. Second, each ion trajectory is used several times to determine the history of ions entering the target at different positions. The methods are demonstrated by three examples: implantation into a rectangular trench, implantation into a 2-D trench with nonplanar sidewalls, and implantation into a 3-D trench with quadratic cross section. >