Scanning transmission electron microscope mapping of electronic transport in polycrystalline BaTiO3 ceramic capacitors
Scanning transmission electron microscope mapping of electronic transport in polycrystalline BaTiO3 ceramic capacitors
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DOI：
10.1063/1.5117055
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发表时间：
2019-09-23
影响因子：
4
通讯作者：
Foran, B.
中科院分区：
文献类型：
--
作者：
Hubbard, W. A.;Lingley, Z.;Foran, B.
我们报告电子输运映射在一个单一的多晶钛酸钡多层陶瓷电容器（MLCC）的电介质层的电子束感应电流（EBIC）测量，使用扫描透射电子显微镜。使用具有有机金属Pt沉积的Ga+聚焦离子束剥离技术来提取并电连接到这些器件，同时保持电极之间的高（>千兆欧姆）电阻。根据器件电阻率的不同，观察到不同的EBIC模式。我们证明了使用EBIC产生的二次电子发射作为一种方法进行电阻衬度成像（RCI），电阻晶界出现在EBIC对比度的步骤。这些RCI图还用于计算任意偏压下器件的电势和电场。观察到高电阻和低电阻欧姆以及整流晶界的混合。这些结果有助于更好地建立分布的磁阻关键的性能限制漏电流的MLCC的预防。
We report electronic transport mapping in a single dielectric layer of a polycrystalline BaTiO3 multilayer ceramic capacitor (MLCC) by electron beam induced current (EBIC) measurements using a scanning transmission electron microscope. Ga+ focused ion beam-lift out techniques with organometallic Pt-deposition are used to extract and electrically connect to these devices while maintaining high (>gigaohm) resistance between electrodes. Different modes of EBIC are observed depending on device resistivity. We demonstrate the use of EBIC resulting from secondary electron emission as a method for performing resistance contrast imaging (RCI), with resistive grain boundaries appearing as steps in EBIC contrast. These RCI maps are also used to calculate the potential and electric field of the device under an arbitrary bias. A mix of high- and low-resistance ohmic as well as rectifying grain boundaries is observed. These results help to better establish the distribution of resistivities critical to the prevention of performance-limiting current leakage in MLCCs.