Chemical Lift-Off Process for Blue Light-Emitting Diodes
Chemical Lift-Off Process for Blue Light-Emitting Diodes
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DOI：
10.1143/apex.3.092101
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发表时间：
2010-01-01
影响因子：
2.3
通讯作者：
Lin, Ming-Shiou
中科院分区：
文献类型：
--
作者：
Lin, Chia-Feng;Dai, Jing-Jie;Lin, Ming-Shiou
通过化学剥离 (CLO) 工艺将 InGaN 发光二极管 (LED) 结构的外延层与截角三角条纹图案化蓝宝石衬底分离。在剥离 GaN 表面上观察到晶体稳定且终止的 V 形 GaN 凹槽图案。与LED/蓝宝石结构（445.8 nm）相比，在剥离LED外延层（440.7 nm）上观察到微光致发光光谱的峰值波长蓝移现象。具有 453 nm 电致发光发射光谱的独立 LED 外延层是通过 CLO 工艺实现的，有可能取代垂直 LED 应用的传统激光剥离工艺。 (c) 2010 日本应用物理学会
An epitaxial layer of an InGaN light-emitting diode (LED) structure was separated from a truncated-triangle-striped patterned-sapphire substrate through a chemical lift-off (CLO) process. A crystallographic stable and terminated V-shaped GaN grooved pattern was observed on the lift-off GaN surface. A peak wavelength blueshift phenomenon of the micro-photoluminescence spectrum was observed on the lift-off LED epitaxial layer (440.7 nm) compared with the LED/sapphire structure (445.8 nm). The free-standing LED epitaxial layer with a 453 nm electroluminescence emission spectrum was realized through a CLO process with the potential to replace the traditional laser lift-off process for vertical LED applications. (c) 2010 The Japan Society of Applied Physics