Field-induced Coulomb coupling in semiconductor macroatoms: Application to single-electron quantum devices
Field-induced Coulomb coupling in semiconductor macroatoms: Application to single-electron quantum devices
复制标题
半导体宏观原子中的场致库仑耦合:在单电子量子器件中的应用
DOI:
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发表时间:
2001
期刊:
影响因子:
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通讯作者:
F. Rossi
中科院分区:
文献类型:
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作者:
I. D’Amico;F. Rossi
An original approach for the control of exciton–exciton Coulomb coupling in semiconductor macroatoms/molecules is proposed. We show that by applying properly tailored external fields, we can induce—or significantly reinforce—excitonic dipoles, which in turn allows one to control and magnify intra- as well as interdot few-exciton effects. Such a dipole–dipole interaction mechanism will be accounted for within a simple analytical model, which is found to be in good agreement with fully three-dimensional calculations. The proposed approach may play an important role for the design and realization of fully optical quantum gates as well as ultrafast optical switches.