Field-induced Coulomb coupling in semiconductor macroatoms: Application to single-electron quantum devices

Field-induced Coulomb coupling in semiconductor macroatoms: Application to single-electron quantum devices
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半导体宏观原子中的场致库仑耦合:在单电子量子器件中的应用

DOI:
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发表时间:
2001
期刊:
影响因子:
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通讯作者:
F. Rossi
F. Rossi
中科院分区:
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文献类型:
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作者:
I. D’Amico;F. Rossi

文献摘要

被引文献

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提出了一种控制半导体宏观原子/分子中激子-激子库仑耦合的原始方法。我们表明,通过应用适当定制的外部场,我们可以诱导或显着增强激子偶极子,这反过来又允许人们控制和放大点内以及点间的少激子效应。这种偶极-偶极相互作用机制将在一个简单的分析模型中得到解释,该模型与完全三维计算非常一致。所提出的方法可能对全光量子门以及超快光开关的设计和实现发挥重要作用。
An original approach for the control of exciton–exciton Coulomb coupling in semiconductor macroatoms/molecules is proposed. We show that by applying properly tailored external fields, we can induce—or significantly reinforce—excitonic dipoles, which in turn allows one to control and magnify intra- as well as interdot few-exciton effects. Such a dipole–dipole interaction mechanism will be accounted for within a simple analytical model, which is found to be in good agreement with fully three-dimensional calculations. The proposed approach may play an important role for the design and realization of fully optical quantum gates as well as ultrafast optical switches.