Hall effect measurement of InAsN alloy films grown directly on GaAs(001) substrates by RF-MBE
Hall effect measurement of InAsN alloy films grown directly on GaAs(001) substrates by RF-MBE
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通过 RF-MBE 测量直接在 GaAs(001) 衬底上生长的 InAsN 合金薄膜的霍尔效应
DOI：
10.1002/pssc.200303490
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
Y. Shiraki
中科院分区：
文献类型：
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作者：
M. Kuroda;R. Katayama;S. Nishio;K. Onabe;Y. Shiraki
由于巨大的带隙弯曲，预计 InAsN 合金的带隙能量会随着氮含量的增加而发生红移。然而，最近的一项研究观察到基本吸收边发生蓝移。由于 InAsN 合金具有较大的载流子浓度，因此该结果似乎受到 Burstein-Moss 效应的显着影响。为了表征真实的带隙能量，应排除伯斯坦-莫斯效应。在本文中，通过霍尔效应测量来估计 InAsN 合金薄膜的载流子浓度，并评估了 Burstein-Moss 位移能。排除 Burstein-Moss 位移能，观察到实际带隙能随着氮含量的增加而红移。 （© 2003 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
Due to the huge bandgap-bowing, a red shift of the band gap energy with increasing nitrogen content is expected for the InAsN alloy. However, a blue shift of the fundamental absorption edge has been observed in a recent study. This result seems to be significantly affected by the Burstein-Moss effect because the InAsN alloy has a large carrier concentration. The Burstein-Moss effect should be ruled out in order to characterize the real band gap energy. In this paper, Hall effect measurements were performed to estimate the carrier concentration of the InAsN alloy films and the Burstein-Moss shift energy was evaluated. Excluding the Burstein-Moss shift energy, a red shift of the real band-gap energy with increasing nitrogen content was observed. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)