Magnetron sputtering: basic physics and application to cylindrical magnetrons

Magnetron sputtering: basic physics and application to cylindrical magnetrons
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DOI:
10.1116/1.569448
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发表时间:
1978-03
期刊:
Journal of Vacuum Science and Technology
影响因子:
--
通讯作者:
J. Thornton
J. Thornton
中科院分区:
其他
文献类型:
--
作者:
J. Thornton

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磁控溅射源可定义为二极管器件,其中磁场与阴极表面协同使用以形成电子陷阱,电子陷阱的配置使得E×B电子漂移电流接近其自身。同轴圆柱形磁控溅射源是在轴向磁场中工作的柱状或空心阴极,多年来已有报道。然而,他们的表现受到终端亏损的限制。当通过适当的磁场整形或通过使用适当位置的电子反射表面来消除端部损耗时,可以获得显著的性能。即使在低压下,也可以获得几乎与电压无关的高电流和高溅射率。这就是所谓的磁控管工作模式的特点。本文综述了直流溅射源在磁控模式下工作的基本原理,重点介绍了圆柱形磁控管。这些设备的重要属性如溅射。
Magnetron sputtering sources can be defined as diode devices in which magnetic fields are used in concert with the cathode surface to form electron traps which are so configured that the E×B electron‐drift currents close on themselves. Coaxial cylindrical magnetron sputtering sources in which post or hollow cathodes are operated in axial magnetic fields have been reported for a number of years. However, their performance is limited by end losses. A remarkable performance is achieved when the end losses are eliminated by proper shaping of the magnetic field or by using suitably placed electron‐reflecting surfaces. High currents and sputtering rates can be obtained, nearly independent of voltage, even at low pressures. This characterizes what has been defined as the magnetron mode of operation. This paper reviews the basic principles that underly the operation of dc sputtering sources in the magnetron mode with particular emphasis on cylindrical magnetrons. The important attributes of these devices as sputt...