Cluster-Preforming-Deposited Si-rich W Silicide: A New Contact Material for Advanced CMOS
Cluster-Preforming-Deposited Si-rich W Silicide: A New Contact Material for Advanced CMOS
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团簇预成型沉积富硅钨硅化物：一种用于先进 CMOS 的新型接触材料
DOI：
10.1149/08903.0155ecst
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
and Toshihiko Kanayama
中科院分区：
文献类型：
--
作者：
Naoya Okada;Noriyuki Uchida;Shinichi Ogawa;and Toshihiko Kanayama
降低中间线(MOL)的电阻是目前先进的CMOS的首要要求。在本文中，我们证明了团簇预制沉积的WSiN(n≤12)薄膜是一种很有前途的S/二极管接触材料，WSiN薄膜的插入使W/n-Si处的电子SBH降低到0.32 eV，在Co/n-Si结处降低到0.43 eV。这种SBH还原是由于WSin薄膜具有4.0 eV的低功函数，并且有效地钝化了硅表面，而没有形成明显的界面态密度，从而释放了在硅表面的费米能级钉扎。对于W/WSin/n-Si和Co/WSin/n-Si，这些结在700℃和500℃以下都有很好的抗退火稳定性。此外，在5 mV/cm应力下，该薄膜显著阻止了铜的扩散，其TDDB势垒高度为1.33 eV。
Reduction of electrical resistance of middle-of-line (MOL) is now a primary requirement for advanced CMOS. In this paper, we demonstrate that the cluster-preforming-deposited (CPD) WSin (n≤ 12) film is a promising contact material for S/D in CMOS; insertion of the WSin film reduces the electron SBH to 0.32 eV at W/n-Si and to 0.43 eV at Co/n-Si junctions. This SBH reduction is due to the fact that the WSin film has a low work function of 4.0 eV and effectively passivates the Si surface without forming an appreciable density of interface states, thereby releasing the Fermi level pinning at the Si surface. These junctions have an excellent stability against annealing up to 700 C for W/WSin/n-Si and to 500 C for Co/WSin/n-Si. Furthermore, this film significantly prevents the Cu diffusion with a TDDB barrier height of 1.33 eV under a 5 MV/cm stress.