PVP-assisted sol-gel deposition of single layer ferroelectric thin films over submicron or micron in thickness
PVP-assisted sol-gel deposition of single layer ferroelectric thin films over submicron or micron in thickness
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DOI：
10.1016/s0955-2219(03)00402-3
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发表时间：
2004-01-01
影响因子：
5.7
通讯作者：
Okubayashi, M
中科院分区：
文献类型：
--
作者：
Kozuka, H;Takenaka, S;Okubayashi, M
采用旋涂法在Pt/Ti/SiO2/Si基片上制备了PZT、BaTiO 3和BaBi 4 Ti4 O 15薄膜。凝胶膜的沉积和烧制仅进行一次，不重复。无裂纹，单相PZT，钛酸钡和BaBi 4 Ti4 O 15膜厚为2.2，0.77和0.40 μ m，可以分别制备，通过非重复旋涂。2.2 μ m厚的PZT薄膜表现出P-E滞后与reversible极化和矫顽场分别为21 μ C cm（-2）和90 kV cm（-1）。PZT、BaTiO 3和BaBi 4 Ti4 O 15薄膜的介电常数在1 kHz下分别为370、310和MO。（C）2003 Elsevier Ltd.保留所有权利。
PZT, BaTiO3 and BaBi4Ti4O15 films were prepared on Pt/Ti/SiO2/Si substrates by spin-coating using alkoxide solutions containing polyvinylpyrrolidone (PVP). Deposition and firing of the gel films were performed just once, not repeated. Crack-free, single-phase PZT, BaTiO3 and BaBi4Ti4O15 films as thick as 2.2, 0.77 and 0.40 mum could be prepared, respectively, via non-repetitive spin-coating. The 2.2 mum thick PZT film exhibited P E hysteresis with remanent polarization and coersive field of 21 muC cm(-2) and 90 kV cm(-1), respectively. The dielectric constant of the PZT, BaTiO3 and BaBi4Ti4O15 films were 370, 3 10 and MO, respectively, at 1 kHz. (C)2003 Elsevier Ltd. All rights reserved.